FWF42006 Wafer4.2mm 180°Vertical (DIP)
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EU RoHS
Compliant(2011/65/EU) -
EU REACH
Dose not contain REACH SVHC(1907/2006/EC) -
EU ELV
Compliant(2000/53/EC)
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FWF42006-S02S22TB
Wafer4.2mm 180°Vertical 2Circuits (DIP)
Stock(pcs) 605 Status Active MPQ 1000 MOQ 1000 Lead time Estimated delivery date when out of stock {{2026-04-15|timezoneDate}} -
FWF42006-S03S22TB
Wafer4.2mm 180°Vertical 3Circuits (DIP)
Stock(pcs) 314 Status Active MPQ 1000 MOQ 1000 Lead time Estimated delivery date when out of stock {{2026-04-15|timezoneDate}} -
FWF42006-S04S22TB
Wafer4.2mm 180°Vertical 4Circuits (DIP)
Stock(pcs) 664 Status Active MPQ 1000 MOQ 1000 Lead time Estimated delivery date when out of stock {{2026-04-15|timezoneDate}} -
FWF42006-S05S22TB
Wafer4.2mm 180°Vertical 5Circuits (DIP)
Stock(pcs) 0 Status Active MPQ 1000 MOQ 1000 Lead time Estimated delivery date {{2026-04-15|timezoneDate}} -
FWF42006-S06S22TB
Wafer4.2mm 180°Vertical 6Circuits (DIP)
Stock(pcs) 0 Status Active MPQ 1000 MOQ 1000 Lead time Estimated delivery date {{2026-04-19|timezoneDate}}
- Category
- CategoryWafer 180°Vertical (DIP)
- Circuits2-5
- Pitch4.2mm
- Height12.80mm
- Electrical
- Current - Maximum per Contact9.00A
- Voltage - Maximum250V
- Contact Resistance15 mΩ Max
- Insulation Resistance1000 MΩ Min
- Withstanding Voltage1500V AC r.m.s
- Temperature Range operating-25℃+85℃
- Material and Plating
- Material-MetalPhosphor Bronze
- Material - Plating MatingTin
- Material - Plating TerminationTin
- Material - ResinPA66 UL94V-2
- Compatible Parts
- PulgFHG42003
- Receptacle-
- TerminalFT42001
- Assembly shell-
