FWF42008 Wafer 4.2mm 180°Vertical (DIP)

FWF42008 Wafer 4.2mm 180°Vertical (DIP)

  • EU RoHS
    Compliant(2011/65/EU)

  • EU REACH
    Dose not contain REACH SVHC(1907/2006/EC)

  • EU ELV
    Compliant(2000/53/EC)

  • Category
  • CategoryWafer 180°Vertical (DIP)
  • Circuits2,4,6,8,10,12,14,16,18,20,22,24
  • Pitch4.2mm
  • Height12.80mm
  • Electrical
  • Current - Maximum per Contact9.00A
  • Voltage - Maximum600V
  • Contact Resistance10 mΩ Max
  • Insulation Resistance1000 MΩ Min
  • Withstanding Voltage1500V AC r.m.s
  • Temperature Range operating-40℃+105℃
  • Material and Plating
  • Material-MetalPhosphor Bronze
  • Material - Plating MatingTin
  • Material - Plating TerminationTin
  • Material - ResinPA66 UL94V-0
  • Compatible Parts
  • PulgFHG42001
  • Receptacle-
  • TerminalFT42001
  • Assembly shell-